MGSF1N03L, mvgsf1n03l power mosfet 30 v, 2.1 a, single n ? channel, sot ? 23 these miniature surface mount mosfets low r ds(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. typical applications are dc ? dc converters and power management in portable and battery ? powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. features ? low r ds(on) provides higher efficiency and extends battery life ? miniature sot ? 23 surface mount package saves board space ? aec ? q101 qualified and ppap capable ? mvgsf1n03lt1 ? these devices are pb ? free and are rohs compliant maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain ? to ? source voltage v dss 30 v gate ? to ? source voltage v gs 20 v continuous drain current r jl steady state t a = 25 c i d 2.1 a t a = 85 c 1.5 power dissipation r jl steady state t a = 25 c p d 0.69 w continuous drain current (note 1) steady state t a = 25 c i d 1.6 a t a = 85 c 1.2 power dissipation (note 1) t a = 25 c p d 0.42 w pulsed drain current t p =10 s i dm 6.0 a esd capability (note 3) c = 100 pf, rs = 1500 esd 125 v operating junction and storage temperature t j , t stg ? 55 to 150 c source current (body diode) i s 2.1 a lead temperature for soldering purposes (1/8? from case for 10 sec) t l 260 c thermal resistance ratings parameter symbol max unit junction ? to ? foot ? steady state r jl 180 c/w junction ? to ? ambient ? steady state (note 1) r ja 300 junction ? to ? ambient ? t < 10 s (note 1) r ja 250 junction ? to ? ambient ? steady state (note 2) r ja 400 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface ? mounted on fr4 board using 650 mm 2 , 1 oz. cu pad size. 2. surface ? mounted on fr4 board using 50 mm 2 , 1 oz. cu pad size. 3. esd rating information: hbm class 0. g d s device package shipping ? ordering information 30 v 125 m @ 4.5 v 80 m @ 10 v r ds(on) typ 2.1 a i d max v (br)dss sot ? 23 case 318 style 21 marking diagram/ pin assignment n3 = specific device code m = date code* = pb ? free package 3 1 drain 1 gate 2 source n ? channel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. MGSF1N03Lt3g sot ? 23 (pb ? free) n3 m (note: microdot may be in either location) *date code orientation and/or overbar may vary depending upon manufacturing location. MGSF1N03Lt1g sot ? 23 pb ? free 3000 / tape & reel 10000 / tape & reel mvgsf1n03lt1g sot ? 23 (pb ? free) 3000 / tape & reel product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain ? to ? source breakdown voltage (v gs = 0 vdc, i d = 10 adc) v (br)dss 30 ? ? vdc zero gate voltage drain current (v ds = 30 vdc, v gs = 0 vdc) (v ds = 30 vdc, v gs = 0 vdc, t j = 125 c) i dss ? ? ? ? 1.0 10 adc gate ? body leakage current (v gs = 20 vdc, v ds = 0 vdc) i gss ? ? 100 nadc on characteristics (note 4) gate threshold voltage (v ds = v gs , i d = 250 adc) v gs(th) 1.0 1.7 2.4 vdc static drain ? to ? source on ? resistance (v gs = 10 vdc, i d = 1.2 adc) (v gs = 4.5 vdc, i d = 1.0 adc) r ds(on) ? ? 0.08 0.125 0.10 0.145 dynamic characteristics input capacitance (v ds = 5.0 vdc) c iss ? 140 ? pf output capacitance (v ds = 5.0 vdc) c oss ? 100 ? transfer capacitance (v dg = 5.0 vdc) c rss ? 40 ? switching characteristics (note 5) turn ? on delay time (v dd = 15 vdc, i d = 1.0 adc, r l = 50 ) t d(on) ? 2.5 ? ns rise time t r ? 1.0 ? turn ? off delay time t d(off) ? 16 ? fall time t f ? 8.0 ? gate charge (see figure 6) q t ? 6000 ? pc source ? drain diode characteristics continuous current i s ? ? 0.6 a pulsed current i sm ? ? 0.75 forward voltage (note 5) v sd ? 0.8 ? v 4. pulse test: pulse width 300 s, duty cycle 2%. 5. switching characteristics are independent of operating junction temperature. MGSF1N03L, mvgsf1n03l product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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